Magnetotransport in topological materials and nonlinear Hall effect via first-principles electronic interactions and band topology
Creators
- 1. Department of Applied Physics and Materials Science, and Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
- 2. School of Physics, Beijing Institute of Technology, Beijing 100081, China
- 3. Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
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Description
Topological effects arising from the Berry curvature lead to intriguing transport signatures in quantum materials. Two such phenomena are the chiral anomaly and nonlinear Hall effect (NLHE). A unified description of these transport regimes requires a quantitative treatment of both band topology and electron scattering. Here, we show accurate predictions of the magnetoresistance in topological semimetals and NLHE in noncentrosymmetric materials by solving the Boltzmann transport equation (BTE) with electron-phonon (e-ph) scattering and Berry curvature computed from first principles. We apply our method to study magnetotransport in a prototypical Weyl semimetal, TaAs, and the NLHE in strained monolayer WSe2, bilayer WTe2 and bulk BaMnSb2. In TaAs, we find a chiral contribution to the magnetoconductance which is positive and increases with magnetic field, consistent with experiments. We show that e-ph interactions can significantly modify the Berry curvature dipole and its dependence on temperature and Fermi level, highlighting the interplay of band topology and electronic interactions in nonlinear transport. The computed nonlinear Hall response in BaMnSb2 is in agreement with experiments. By adding the Berry curvature to first-principles transport calculations, our work advances the quantitative analysis of a wide range of linear and nonlinear transport phenomena in quantum materials.
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References
Preprint (Submitted and Accepted in Physical Review Materials) D. C. Desai, L. A. Tan, J.-J. Zhou, S. Peng, J. Park, M. Bernardi, arXiv:2510.07585 (2026), doi: 10.48550/arXiv.2510.07585