materialscloud:2024.120
Published August 7, 2024 | Version v1
Dataset Open

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL 02-668 Warsaw, Poland
  • 2. Lorentz Institute and Leiden Institute of Advanced Computer Science, Leiden University, P.O. Box 9506, 2300 RA Leiden, The Netherlands

* Contact person

Description

Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of electron's spin splitting. The resulting spin dephasing due to charge noise limits the coherence times of spin qubits in isotopically purified Si/SiGe quantum dots. We investigate the spin splitting noise caused by such process caused by microscopic motion of charges at the semiconductor-oxide interface. We compare effects of isotropic and planar displacement of the charges, and estimate their densities and typical displacement magnitudes that can reproduce experimentally observed spin splitting noise spectra. We predict that for defect density of 10¹⁰ cm⁻², visible correlations between noises in spin splitting and in energy of electron's ground state in the quantum dot, are expected.

Files

File preview

All files

Files (25.6 MiB)

Name Size
md5:47c608440e76de071d8e20614e04c996
239 Bytes Preview Download
md5:c36ea88d9c9b7f0150a121e74a48e6c7
25.6 MiB Preview Download
md5:d43cc99a50f96c13bd4e9b56408f6f3c
1.1 KiB Preview Download

References

Preprint (Preprint in which data is discussed)
M. Kępa, Ł. Cywiński, J.A. Krzywda, arXiv:2305.06011 (2023), doi: 10.48550/arXiv.2305.06011

Journal reference (Paper in which method is discussed)
M. Kępa, Ł. Cywiński, J.A. Krzywda, Appl. Phys. Lett. 123, 034003 (2023), doi: 10.1063/5.0156358

Journal reference (Paper in which method is discussed)
M. Kępa, Ł. Cywiński, J.A. Krzywda, Appl. Phys. Lett. 123, 034003 (2023)