materialscloud:2024.118
Published August 7, 2024 | Version v1
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Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL 02-668 Warsaw, Poland
  • 2. JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
  • 3. Lorentz Institute and Leiden Institute of Advanced Computer Science, Leiden University, P.O. Box 9506, 2300 RA Leiden, The Netherlands

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Description

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, ρ∼10¹⁰ cm⁻², and typical lenghtscales of isotropically distributed displacements of these charges, δr≤1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures.

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References

Preprint (Preprint in which the data is discussed)
M. Kępa, N. Focke, Ł. Cywiński, J.A. Krzywda, arXiv:2303.13968 (2023), doi: 10.48550/arXiv.2303.13968

Journal reference (Paper In which the method is described)
M. Kępa, N. Focke, Ł. Cywiński, J.A. Krzywda, Appl. Phys. Lett. 123, 034005 (2023), doi: 10.1063/5.0151029

Journal reference (Paper In which the method is described)
M. Kępa, N. Focke, Ł. Cywiński, J.A. Krzywda, Appl. Phys. Lett. 123, 034005 (2023)